PART |
Description |
Maker |
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM 2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode) 2M x 8-Bit Dynamic RAM From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144 4M X 64 EDO DRAM MODULE, 60 ns, ZMA144 144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density 2M x 64 Bit EDO DRAM Module (SO-DIMM)... 4M x 64 Bit EDO DRAM Module (SO-DIMM)...
|
INFINEON TECHNOLOGIES AG
|
HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity 8M x 36 Bit DRAM Module with Parity 8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
Q67100-Q2009 Q67100-Q2010 321160X HYM321160GS-60 H |
1M x 32 Bit DRAM Module From old datasheet system 1M x 32-Bit Dynamic RAM Module 1M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns 16M EDO DRAM (4-Mword x 4-bit), 60ns 16M EDO DRAM (4-Mword x 4-bit), 70ns
|
Elpida Memory
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
MSM54V16272 |
262,144-Word x 16-Bit Multiport DRAM 262144-Word x 16-Bit Multiport DRAM
|
OKI electronic components OKI[OKI electronic componets]
|
KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|